100a Mosfet

100a Mosfet
High Current Mosfet Switch
Mosfet Power Supply Circuits
100v 100a Mosfet
Mosfet 100a 100v

Type Designator: BUK553-100A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

The current is very high, e.g. 100A, and therefore fast switching is needed to reduce heat build-up. By using MOSFETs in parallel, the current and consequent heat is reduced significantly. To reduce jolting action on the alternator when switching on, and therefore reduce stress and increase lifetime, I imagine the switching ought to be high.

UTT100N06 Power MOSFET. Drain-Source Diode Forward Voltage VSD IS=100A, VGS=0V 1.0 1.5 V Resistance of Gate RG 0.65 1.3 2 Ω Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%. Essentially independent of operating temperature. UTT100N06 Power MOSFET.
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Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 6.5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm

Package: SOT78

BUK553-100A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUK553-100A Datasheet (PDF)

Skyrim hdt equipment. 0.1. buk553-100a-b 1.pdf Size:56K _philips

Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK553 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain

4.1. buk553-100b.pdf Size:60K _philips

100a Mosfet

7.1. buk553-60a buk553-60b.pdf Size:91K _philips

7.2. buk553-48c 1.pdf Size:69K _philips

Philips Semiconductors Product specification PowerMOS transistor BUK553-48C Voltage clamped logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAProtected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNITmode logic level field-effect powertransistor in a plastic envelope. V(CL)DSR Drain-source clamp voltage 40 48 58 VThe device is intended for use in ID Drain current (

7.3. buk553-60a-b 1.pdf Size:54K _philips

Philips Semiconductors Product Specification PowerMOS transistor BUK553-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK553 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain curre

Datasheet: BUK473-100A, BUK473-100B, BUK482-100A, BUK543-100A, BUK545-100A, BUK545-100B, BUK552-100A, BUK552-100B, 2SK3569, BUK555-100A, BUK555-100B, BUK555-200A, BUK563-100A, BUK565-100A, BUK581-100A, BUK582-100A, BUK7506-30.

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Detailed Description

Manufacturer: NXP

Description: MOSFET, N CH 100 V 33 A SOT428

Docket:
BUK9240-100A
TrenchMOSTM logic level FET
Rev.

01 -- 03 October 2000 Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM1 technology, featuring very low on-state resistance. Product availability: BUK9240-100A in SOT428 (D-PAK).

Specifications:

Continuous Drain Current Id: 33 A
Current Id Max: 33 A
Drain Source Voltage Vds: 100 V
Mounting Type: SMD
Number of Pins: 3
On Resistance Rds(on): 38.6 MOhm
Operating Temperature Range: -55°C to +175°C
Package / Case: SOT-428
Power Dissipation: 114 W
Rds(on) Test Voltage Vgs: 10 V
SVHC: No SVHC (19-Dec-2011)
Threshold Voltage Vgs Typ: 1.5 V
Transistor Case Style: SOT-428
Transistor Polarity: N Channel
Transistor Type: Enhancement
Voltage Vds Typ: 100 V
Voltage Vgs Max: 10 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Y-Ex

100v 100a Mosfet

Other Names:

Mosfet 100a 100v

BUK9240100A, BUK9240 100A